unisonic technologies co., ltd uk3919 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2008 unisonic technologies co., ltd qw-r502-200.a switching n-channel power mosfet ? description this uk3919 n-channel logic level mosfet is produced using utc semiconductor advanced power trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. the uk3919 is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low voltage and battery powered applications. ? features * r ds(on) = 5.6m ? @v gs = 10 v * low capacitance * optimized gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain *pb-free plating product number:uk3919l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing uk3919-tn3-r UK3919L-TN3-R to-252 g d s tape reel uk3919-tn3-t uk3919l-tn3-t to-252 g d s tube
uk3919 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-200.a ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 25 v gate to source voltage v gss 20 v continuous drain current i d 64 a pulsed drain current (note1) i dm 256 a single avalanche current (note2) i as 27 a single avalanche energy (note2) e as 73 mj total power dissipation p d 36 w storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functiona l device operation is not implied. ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics zero gate voltage drain current i dss v ds =25 v, v gs =0 v 10 a gate-body leakage current i gss v ds =0 v, v gs =20v 100 na on characteristics gate-threshold voltage v gs(off) v ds =10v, i d =1ma 2.0 2.5 3.0 v v gs =10 v, i d =32 a 4.5 5.6 drain-source on-resistance r ds(on) v gs =5.0 v, i d =16 a 6.8 13.7 m ? dynamic parameters input capacitance c iss 2050 output capacitance c oss 460 reverse transfer capacitance c rss v ds =10v, v gs =0v, f=1mhz 330 pf switching parameters gate to source charge q g 42 gate charge at threshold q gs 8 gate to drain charge q gd v dd =20v, v gs =10 v,i d =64 a 15 nc turn-on delay time t d(on) 16 turn-on rise time t r 19 turn-off delay time t d(off) 53 turn-off fall-time t f v dd =12.5v, i d =32 a, v gs =10v, r g =10 ? 22 ns source- drain diode ratings and characteristics body diode forward voltage v sd i f =64 a, v gs =0 v 0.97 v reverse recovery time t rr 23 ns reverse recovery charge q rr i f = 64 a,v gs =0 v ,di/dt = 100 a/ s 11 nc notes: 1. pw 10 s, duty cycle 1% 2. starting t ch = 25 , v dd = 12.5 v, r g = 25 ? , v gs = 20 0 v
uk3919 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-200.a ? typical characteristics drain current, i d (a) drain current, i d (a) gate cut-off voltage,v gs(off) (v) forward transfer admittance total power diaaipation,p d (w) percentage of rated power,d t ( )
uk3919 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-200.a ? typical characteristics(cont.) on-state resistance,r ds(on) (m ) on-state resistance,r ds(on) (m ) gate-to-source voltage, v gs (v) gate-to-source voltage, v gs (v) capacitance, c (pf) v gs =10v i d =32a pulsed 10 8 6 4 2 0 -100 -50 0 50 100 150 200 1000 100 10 1 0.1 1 10 100 t d(off) t f t r t d(on) v dd =12.5v v gs =10v r g =10v channel temperature,t ch ( ) drain current,i d (a) switching characteristics drain to source on-state resistance vs. channel temperature
uk3919 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-200.a ? typical characteristics(cont.) di/dt=100a/ s v gs =0v 1 10 100 1000 110100 1.5 1 0.5 0 0.01 0.1 1 10 100 1000 diode forward current,i f (a) reverse recovery time,t rr (ns) reverse recovery time vs.diode forward current pulsed 0v v gs =10v source to drain voltage,v f(s-d) (v) source to drain diode forward voltage diode forward current,i f (a) v dd =12.5v r g =25 v gs =20 0v i as 27a i as =27a e as =73mj 0.01 0.1 1 10 1 10 100 120 100 80 60 40 20 0 25 50 75 100 125 150 v dd =12.5v r g =25 v gs =20 0v starting t ch =25 single avalanche energy derating factor energy derating factor, ( ) starting channel tem perature,starting,t ch ( ) inductive load,l (mh) single avalanche current,i as (a) single avalanche current vs. inductive load drain current, i d (a)
uk3919 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-200.a ? typical characteristics(cont.) 1000 100 10 1 0.1 0.01 100 1m 10m 100m 1 10 100 1000 single pulse transirnt thermal resistance vs. pulse width pulse width,pw (s) transient thermal resistance, r th(t) ( /w) r th(ch-a) =125 /w r th(ch-c) =3.47 /w utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
